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NTGD3133P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t ≤ 5 s (Note 3)
Junction ? to ? Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
115
95
225
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 30 mm 2 [2 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V (BR)DSS
V (BR)DSS /T J
I DSS
V GS = 0 V
V GS = 0 V, V DS = ? 16 V
I D = ? 250 m A
T J = 25 ° C
T J = 85 ° C
? 20
?
?
?
?
14.2
?
?
?
?
? 1.0
? 10
V
mV/ ° C
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
?
?
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS
I D = ? 250 m A
? 0.6
? 0.95
? 1.4
V
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 2.2 A
?
90
145
m W
V GS = ? 2.5 V, I D = ? 1.6 A
?
140
200
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 2.2 A
?
4.5
?
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
?
400
?
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, V DS = ? 10 V, f = 1.0 MHz
?
?
75
40
?
?
Total Gate Charge
Q G(TOT)
?
3.8
5.5
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 2.2 A
?
?
?
0.5
0.9
1.0
?
?
?
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
?
6.7
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 1.0 A, R G = 6.0 W
?
?
?
12.7
13.2
11
?
?
?
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
V SD
t RR
V GS = 0 V, T J = 25 ° C
I S = ? 0.8 A
?
?
? 0.8
12
? 1.2
?
V
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V,
dI SD / dt = 100 A/ m s, I S = ? 0.8 A
?
?
8.0
4.0
?
?
Reverse Recovery Charge
Q RR
?
4.0
?
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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